NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

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NPN Silicon Germanium RF Transistor

Product Brief The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of approximately 40 GHz and is suited for low

文件：602.83 Kbytes 页数：11 Pages

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丝印：R2；Package：TSLP-3-10；C NPN RF bipolar transistor

文件：553.86 Kbytes 页数：22 Pages

Infineon

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丝印：R2；Package：TSLP-3-10；C NPN RF bipolar transistor

文件：553.86 Kbytes 页数：22 Pages

Infineon

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Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.16359 Mbytes 页数：29 Pages

Infineon

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Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.16359 Mbytes 页数：29 Pages

Infineon

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低噪声RF 管基

• Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA\n • High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V\n • Ease of use due to the gain-bandwidth capabilities\n • High sensitivity low noise laser receiver matrix\n • High RF Transistor Hfe controllability\n • Very thin ;

Infineon

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NPN Silicon Germanium RF Transistor

Infineon

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包装：散装 描述：RF BIP TRANSISTORS

Infineon

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包装：散装 描述：RF BIP TRANSISTORS

Infineon

英飞凌