NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor

• Provides outstanding performance for

a wide range of wireless applications

up to 10 GHz and more

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.5 dB at 1.8 GHz

Outstanding noise figure F = 0.8 dB at 6 GHz

• High maximum stable gain

Gms = 24 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 150 GHz fT-Silicon Germanium technology

BFR740L3属于分立半导体产品 > 晶体管 - 双极（BJT）- 射频。英飞凌科技公司制造生产的BFR740L3晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。