BFQ73

NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz)

NPNSiliconRFTransistor ●Forlow-noiseIFandbroadbandamplifiersinantennaandtelecommunicationssystemsupto2GHzatcollectorcurrentsfrom10mAto70mA. ●Hermeticallysealedceramicpackage. ●HiRel/Milscreeningavailable. ●CECC-typeavailable:CECC50002/261.

BFQ73S

NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz)

NPNSiliconRFTransistor ●Forlow-noiseIFandbroadbandamplifiersinantennaandtelecommunicationssystemsupto2GHzatcollectorcurrentsfrom10mAto70mA. ●Hermeticallysealedceramicpackage. ●HiRel/Milscreeningavailable. ●CECC-typeavailable:CECC50002/261.

BFQ74

NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)

NPNSiliconRFTransistor ●Forlow-noiseamplifiersintheGHzrange,andbroadbandanaloganddigitalapplicationsintelecommunicationssystemsatcollectorcurrentsfrom1mAto25mA. ●Hermeticallysealedceramicpackage. ●HiRel/Milscreeningavailable.

BFQ75

PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.)

PNPSiliconRFTransistor ●Forbroadbandamplifiersupto2GHzatcollectorcurrentsfrom5mAto30mA. ●Complementarytype:BFQ72(NPN).

BFQ76

PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)

PNPSiliconRFTransistor ●Forbroadbandamplifiersupto2GHzatcollectorcurrentsupto20mA. ●Complementarytype:BFQ71(NPN).

BFQ81

Silicon NPN Planar RF Transistor

Features •Smallfeedbackcapacitance •Lownoisefigure •Lowcrossmodulation •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications    RFamplifierupto2GHz,especiallyformobiletelephone.

BFQ81

NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

NPNSiliconRFTransistor •Forlow-noiseamplifiersupto2GHzandbroadbandanaloganddigitalapplicationsintelecommunicationssystemsatcollectorcurrentsfrom0.5mAto20mA.

BFQ81

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=16V(Min) ·IntendedforRFwidebandamplifierapplications suchassatelliteTVsystemsandRFportablecommunication equipmentwithsignalfrequenciesupto2GHz. APPLICATIONS ·Lownoisefigure ·Goldmetallizationensuresexcellen

BFQ81-GS08

Silicon NPN Planar RF Transistor

Features •Smallfeedbackcapacitance •Lownoisefigure •Lowcrossmodulation •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications    RFamplifierupto2GHz,especiallyformobiletelephone.

BFQ82

NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)

NPNSiliconRFTransistor ●Forlow-noise,high-gainamplifiersupto2GHz. ●Linearbroadbandapplicationsatcollectorcurrentsupto40mA. ●Hermeticallysealedceramicpackage. ●fT=8GHz F=1.1dBat800MHz