NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ba

文件：73.1 Kbytes 页数：10 Pages

PHI

飞利浦

NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT37 envelops, intended for wideband amplification applications. The device features high output voltage capabilities. A SOTS5 (TO-39) version (ref: ON4497) Is available on request.

文件：521.7 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN 4 GHz wideband transistor

DESCRIPTION\nNPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in\nlow power band IV and V equipment. Diffused emitter-ballasti

恩XP

SOT-89

恩XP

上传：深圳市英科美电子有限公司

SOT323

Infineon

英飞凌

上传：深圳权泰科技有限公司