BFG540-XR

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

BFP540

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •Forhighestgainandlownoiseamplifier •OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available

BFP540

NPNSiliconRFTransistor

BFP540

LowNoiseSiliconBipolarRFTransistor

BFP540ESD

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •ForESDprotectedhighgainlownoiseamplifier •HighESDrobustness typicalvalue1000V(HBM) •OutstandingGms=21.5dB@1.8GHz MinimumnoisefigureNFmin=0.9dB@1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackage withvi

BFP540ESD

NPNSiliconRFTransistor

BFP540ESD

LowNoiseSiliconBipolarRFTransistor

BFP540F

NPNSiliconRFTransistor

NPNSiliconRFTransistor •Forhighestgainlownoiseamplifierat1.8GHz •OutstandingGms=20dB NoiseFigureF=0.9dB •Goldmetallizationforhighreliability •SIEGET45-Line

BFP540FESD

NPNSiliconRFTransisto

NPNSiliconRFTransistor* •ForESDprotectedhighgainlownoiseamplifier •ExcellentESDperformancetypicalvalue1000V(HBM) •OutstandingGms=20dB NoiseFigureF=0.9dB •SIEGET®45-Line •Pb-free(ROHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdesc

BFP540FESD

NPNSiliconRFTransistor