RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：N49；Package：SOT-143B；NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V，IC=40mA，f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V，IC=10mA，f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V，IC=40mA，f=1GHz

文件：556.92 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

文件：159.89 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件：548.51 Kbytes 页数：10 Pages

INFINEON

英飞凌