Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS

文件：97.3 Kbytes 页数：5 Pages

SIEMENS

西门子

丝印：20-；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：20-；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 页数：12 Pages

PHI

PHI

丝印：21*；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 页数：12 Pages

PHI

PHI

丝印：21*；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：22*；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：22*；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 页数：12 Pages

PHI

PHI

丝印：23*；Package：SOT-23；NPN 1 GHz wideband transistor

FEATURES • Feedback capacitance typ. 1 pF • Stable oscillator operation • High current gain • Good thermal stability. APPLICATIONS • It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator.

文件：96.82 Kbytes 页数：11 Pages

PHI

PHI

NPN 1 GHz wideband transistor

DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BF547W uses the same crystal as the SOT23 version, BF547. FEATURES • Stable oscillator operation • High current gain • Good thermal stability. APPLICATIONS It is primarily intended as a mixer, oscillator and IF

文件：83.98 Kbytes 页数：12 Pages

PHI

PHI

PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • Medium frequency applications in thick and thin film circuits.

文件：41.57 Kbytes 页数：8 Pages

PHI

PHI