SILICON PLANAR PNP

VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package. It is intended for use as mixer and oscillator in the VHP range. However, it may also be used as not controlled preamplifier at low noise.

文件：118.82 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Silicon RF Transistor (For VHF mixer and oscillator stages)

PNP Silicon RF Transistor ● For VHF mixer and oscillator stages

文件：13.35 Kbytes 页数：2 Pages

SIEMENS

西门子

NPN SILICON RF TRANSISTOR

NPN Silicon RF Transistor BF 507 is an NPN silicon planar RF transistor in TO 92 plastic package (10 A 3 DIN 41686). The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF oscillators.

文件：35.57 Kbytes 页数：2 Pages

SIEMENS

西门子

Silicon PNP RF Transistor

Feature *High power gain *Low noise figure *High reverse attenuation

文件：250.08 Kbytes 页数：5 Pages

TFUNK

威世

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

文件：37.61 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

文件：37.61 Kbytes 页数：7 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

文件：37.61 Kbytes 页数：7 Pages

PHI

飞利浦