PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • Medium frequency applications in thick and thin film circuits.

文件：100.8 Kbytes 页数：6 Pages

恩XP

PNP Medium Frequency Transistor

Features ● Low current (max. 25 mA). ● Low voltage (max. 40 V).

文件：36.03 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners)

PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance

文件：92.39 Kbytes 页数：5 Pages

SIEMENS

西门子

丝印：LA；Package：SOT23；nullPNP medium frequency transistor

FEATURES •Low current (max. 25 mA) •Low voltage (max. 40 V).

文件：273.07 Kbytes 页数：7 Pages

NEXPERIA

安世

NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)

NPN Silicon RF Transistor ● For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits

文件：60.6 Kbytes 页数：4 Pages

SIEMENS

西门子

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：160.19 Kbytes 页数：2 Pages

Diotec

德欧泰克

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage. APPLICATIONS • Impedance converters in e.g. electret microphones and infra-red detectors • VHF amplifiers in os

文件：100.6 Kbytes 页数：11 Pages

PHI

飞利浦

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage. APPLICATIONS • Impedance converters in e.g. electret microphones and infra-red detectors • VHF amplifiers in os

文件：100.6 Kbytes 页数：11 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP