N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage. APPLICATIONS • Impedance converters in e.g. electret microphones and infra-red detectors • VHF amplifiers in os

文件：100.6 Kbytes 页数：11 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage. APPLICATIONS • Impedance converters in e.g. electret microphones and infra-red detectors • VHF amplifiers in os

文件：100.6 Kbytes 页数：11 Pages

PHI

PHI

N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage. APPLICATIONS • Impedance converters in e.g. electret microphones and infra-red detectors • VHF amplifiers in os

文件：100.6 Kbytes 页数：11 Pages

PHI

PHI