BF556A

N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage. APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesand infra-reddetectors •VHFamplifiersinos

BF556A

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BF556A,215

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：JFET N-CH 30V 7MA SOT23

BF556A,235

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：JFET N-CH 30V 7MA SOT23

556

ComputerGrade,AxialLeaded,Aluminum

Type556capacitorsaredesignedfordataprocessing,telecomandinstrumentationapplicationsrequiringsmallersizewithextendedtemperaturerange.Theyhavelongerlifeanduptotwicetheripplecapabilityof+85°Ccapacitors. Highlights •Smallsize •Extendedlife •Extendedtemperatur

556

BIGTWINMOTORCYCLES

GENERALINFORMATION Anycoilorcombinationofcoilswithatotalprimaryresistanceofatleast2.0ohmscanbeusedwiththisdistributor.Werecommenda2-3ohmcoilforracinganda3-4ohmcoilforstreetuse.Acoilwith4-5ohmsresistancemaybeused.However,performancemaybereduced,

556

DrywallPunch

556TR

KEYSTONEELECTRONICSCORP.

NOTES: TAPEANDREELSPECIFICATIONS: 1.TAPE: MAT'LALLCONDUCTIVEPOLYSTYRENECARRIER ANSI/EIA-481STANDARD 1.260[32.0]WIDE;.787[20.0]PITCH 2.REEL: 13.0[330.2]DIA.250PIECESOF PARTNO.556PERREEL. 02NOTES:TAPEANDREELSPECIFICATIONS:1.TAPE:MAT'LALLCONDUCTIVEPOLYSTYREN

A556RW

WideInputRange,5WSingle&DualOutputDC/DCConverters

AC556

TO-8CASCADABLEAMPLIFIERS

AIMB-556

Socket478Core??2Duo/Celeron짰MProcessor-basedMicroATXwithDDR2/4COM/DualLAN

BC556

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●HighVoltage ●ComplementtoBC546/BC547/BC548

BC556

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●HighVoltage ●ComplementtoBC546/BC547/BC548

BC556

SEMICONDUCTORS

BC556

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighVoltage ●ComplementtoBC546,BC547,BC548

BC556

PNPSiliconAmplifierTransistor625mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •150°CJunctionTemperature •ThroughHolePackage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:TypeNumber •Halogenfreeavailableuponrequest

BC556

FEATURES

FEATURES •HighVoltage •ComplementtoBC546,BC547,BC548

BC556

PNPEpitaxialSiliconTransistor

Features •SwitchingandAmplifier •High-Voltage:BC556,VCEO=-65V •Low-Noise:BC559,BC560 •ComplementtoBC546,BC547,BC548,BC549,andBC550

BC556

SiliconPNPtransistorinaTO-92(R)PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92(R)PlasticPackage. Features Highvoltage,complementarytoBC546. Applications Generalpurposeandswitchingapplication.

BC556

SwitchingandAmplifier

Features •SwitchingandAmplifier •High-Voltage:BC556,VCEO=-65V •Low-Noise:BC559,BC560 •ComplementtoBC546,BC547,BC548,BC549,andBC550