N-channel junction FET

DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable. FEATURES • High transition frequency for excellent sensitivity in AM car radios • High transfer admittance. APPLICATIONS • Pre-amplifiers in AM

文件：80.62 Kbytes 页数：7 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel junction FET

Overview N-channel symmetrical silicon junction Field-Effect Transistor in a SOT23 package. Drain and source are interchangeable. High transfer admittance\nHigh transition frequency for excellent sensitivity in AM car radios;

恩XP

N-channel junction FET

文件：87.93 Kbytes 页数：12 Pages

恩XP

N-channel junction FET

文件：87.93 Kbytes 页数：12 Pages

JMNIC

锦美电子

N-channel junction FET

文件：87.93 Kbytes 页数：12 Pages

JMNIC

锦美电子