N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

文件：111.29 Kbytes 页数：16 Pages

PHI

飞利浦

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

文件：303.6 Kbytes 页数：14 Pages

恩XP

N-channel dual gate MOS-FETs

文件：309.91 Kbytes 页数：14 Pages

恩XP

N-channel dual gate MOS-FETs

文件：309.91 Kbytes 页数：14 Pages

恩XP

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type Field-Effect Transistor in a plastic SOT143R package. High transfer admittance to input capacitance ratio\nLow noise;

恩XP