丝印：MO；Package：SOT-143；Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

文件：249.05 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：MO；Package：SOT-143；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz

文件：180.2 Kbytes 页数：8 Pages

SIEMENS

西门子

丝印：MO；Package：SOT-143；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：MO；Package：SOT-143；Silicon N_Channel MOSFET Tetrode

文件：93.08 Kbytes 页数：9 Pages

Infineon

英飞凌

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes 页数：12 Pages

PHI

飞利浦

射频 MOSFET 和有源偏置控制器

硅N沟道MOSFET三极管 • 具有高 S / C 品质因数的短沟道晶体管\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司