Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 300V 0.1A SOT223

Nexperia USA Inc.

C Heterojunction Wideband RF Bipolar Transistor

Product Brief The BFP720 is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 25 mA. The d

文件：1.84071 Mbytes 页数：26 Pages

INFINEON

英飞凌

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.48703 Mbytes 页数：25 Pages

INFINEON

英飞凌

Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input

文件：1.88516 Mbytes 页数：29 Pages

INFINEON

英飞凌