Silicon N-channel dual gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF applicatio

文件：63.19 Kbytes 页数：12 Pages

PHI

飞利浦

Silicon N-channel dual gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF applicatio

文件：243.4 Kbytes 页数：9 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon N-channel dual gate MOS-FET

文件：249.65 Kbytes 页数：9 Pages

JMNIC

锦美电子

N-channel dual-gate MOSFET

Archived content is no longer updated and is made available for historical reference only.\n-->Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package.\n \n• Interconnected source and substrate\n• Professional communications equipment\n• VHF television tuners\n;

恩XP

Silicon N-channel dual gate MOS-FET

文件：249.65 Kbytes 页数：9 Pages

JMNIC

锦美电子

Silicon N-channel dual gate MOS-FET

文件：249.65 Kbytes 页数：9 Pages

JMNIC

锦美电子