N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

文件：37.61 Kbytes 页数：7 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道硅FET

SOT23封装N沟道非对称平面外延结型场效应晶体管。 低反馈容值\n低噪声;

恩XP

N-channel silicon field-effect transistors

文件：40.31 Kbytes 页数：7 Pages

JMNIC

锦美电子

N-channel silicon field-effect transistors

文件：40.31 Kbytes 页数：7 Pages

JMNIC

锦美电子