NPN 1 GHz wideband transistor

DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BF547W uses the same crystal as the SOT23 version, BF547. FEATURES • Stable oscillator operation • High current gain • Good thermal stability. APPLICATIONS It is primarily intended as a mixer, oscillator and IF

文件：83.98 Kbytes 页数：12 Pages

PHI

飞利浦

UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provi

文件：123.21 Kbytes 页数：12 Pages

PHI

飞利浦

250 WATTS (AC) DC/D CSINGLE OUTPUT

250 WATTS (AC) DC/DC SINGLE OUTPUT Features • Single Output • 3U x 21(24)TE x 166.5mm(24TE for 5V outputs) • Weight 1.7kg

文件：405.25 Kbytes 页数：1 Pages

POWERBOX

NPN GENERAL PURPOSE TRANSISTOR

VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99 Sn above can meet RoHS environment substance directive request

文件：160.26 Kbytes 页数：5 Pages

PANJIT

強茂