BF547W

NPN 1 GHz wideband transistor

DESCRIPTION SiliconNPNtransistorinaplasticSOT323(S-mini)package.TheBF547WusesthesamecrystalastheSOT23version,BF547. FEATURES •Stableoscillatoroperation •Highcurrentgain •Goodthermalstability. APPLICATIONS Itisprimarilyintendedasamixer,oscillatorandIF

BLF547

UHFpush-pullpowerMOStransistor

DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT262A2balancedflangeenvelope,withtwoceramiccaps.Themountingflangeprovi

C547

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg

C547A

NPNGENERALPURPOSETRANSISTOR

VOLTAGE30V/45V/65VPOWER625mWatts FEATURES •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Complimentary(PNP)device:BC556,BC557,BC558Series •Pbfreeproduct:99SnabovecanmeetRoHSenvironmentsubstancedirectiverequest

C547B

NPNgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNtransistorinaTO-92;SOT54plasticpackage.PNPcomplements:BC556andBC557.

CH547

8-bitUSBsinglechipmicrocomputer

CH547F

8-bitUSBsinglechipmicrocomputer

CH547G

8-bitUSBsinglechipmicrocomputer

CH547L

8-bitUSBsinglechipmicrocomputer

CP547

PowerTransistorPNP-DarlingtonChip

PROCESSDETAILS ProcessEPITAXIALBASE DieSize195X195MILS DieThickness12MILS BaseBondingPadArea29X29MILS EmitterBondingPadArea61X35MILS TopSideMetalizationAI-30,000Å BackSideMetalizationTi/Ni/Au-6,000Å