UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provi

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PHI

UHF push-pull power MOS transistor

恩XP

250 WATTS (AC) DC/D CSINGLE OUTPUT

250 WATTS (AC) DC/DC SINGLE OUTPUT Features • Single Output • 3U x 21(24)TE x 166.5mm(24TE for 5V outputs) • Weight 1.7kg

文件：405.25 Kbytes 页数：1 Pages

POWERBOX

NPN GENERAL PURPOSE TRANSISTOR

VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99 Sn above can meet RoHS environment substance directive request

文件：160.26 Kbytes 页数：5 Pages

PANJIT

強茂

NPN general purpose transistors

FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557.

文件：47.96 Kbytes 页数：8 Pages

PHI

PHI