NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems.

文件：49 Kbytes 页数：8 Pages

PHI

PHI

NPN high-voltage transistors

DESCRIPTION\nNPN high-voltage transistor in a TO-202; SOT128B plastic package.FEATURES\n• Low current (max. 150 mA)\n• High voltage (max. 210 V).APPLICATIONS\n• Telephone systems. • Low current (max. 150 mA)\n• High voltage (max. 210 V).;

恩XP

Silicon Diode, High Speed Switch

Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits.

文件：18.24 Kbytes 页数：2 Pages

NTE

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

文件：156.08 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

文件：156.08 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司