丝印：22*；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

文件：100.11 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：22*；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道FET

N沟道对称硅结型场效应晶体管，采用SOT23封装。 高增益\n 低截止电压\n 低漏电水平;

恩XP

恩智浦

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the

文件：94.9 Kbytes 页数：12 Pages

PHI

飞利浦

SINGLE DIGIT LED DISPLAYS

SINGLE DIGIT LED DISPLAYS

文件：189.12 Kbytes 页数：2 Pages

YSTONE

早安股份

SINGLE DIGIT LED DISPLAYS

SINGLE DIGIT LED DISPLAYS

文件：189.12 Kbytes 页数：2 Pages

YSTONE

早安股份