BF545C

Marking：22*；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

BLF545

UHFpush-pullpowerMOStransistor

DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOSpush-pulltransistordesignedforcommunicationstransmitterapplicationsintheUHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT268balancedflangeenvelope,withtwoceramiccaps.Themountingflangeprovidesthe

BS-A545RD

SINGLEDIGITLEDDISPLAYS

SINGLEDIGITLEDDISPLAYS

BS-A545RE

SINGLEDIGITLEDDISPLAYS

SINGLEDIGITLEDDISPLAYS

BS-C545RD

13.2mm(0.52)highsingledigitsegmentsdisplay

BV-M545RE

14.10mm(0.56)highFivedigitsevensegmentsdisplay.

C545

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg

CDBB545LR-HF

SMDSchottkyBarrierRectifiers

Features -Highcurrentcapability. -Highsurgecurrentcapability. -Lowreversecurrent.

CDBD545-HF

SMDSchottkyBarrierRectifiers

CL545A

5ASurfaceMountLowBarrierDiode