isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in

文件：111.26 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in

文件：127.97 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TO-220

ON

上传：深圳市芯立阳电子技术有限公司

TO-220

ST/意法

上传：深圳庞田科技有限公司