isc Silicon PNP Darlington Power Transistors

DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D

文件：113.44 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistors

DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/

文件：131.08 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TO-220

ON

上传：深圳市芯立阳电子技术有限公司

TO-220

ST/意法

上传：深圳庞田科技有限公司