| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
10mmADJUSTABLERFCOILS(SHIELDED) | FRONTIER Frontier Electronics | FRONTIER | ||
10mmAdjustableShieldedRFCoil(I) | FRONTIER Frontier Electronics | FRONTIER | ||
EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●ᴌWithBuilt-inBiasResistors. ●ᴌSimplifyCircuitDesign. ●ᴌReduceaQuantityofPartsandManufacturingProcess. ●ᴌHighPackingDensity. | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR(HIGHCURRENTSWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) HIGHCURRENTSWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighOutputCurrent:-800mA. | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity. | KECKEC CORPORATION KEC株式会社 | KEC | ||
WideInput,7.5WSMTSingle&DualOutputDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD | ||
OperationalAmplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
OperationalAmplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
OperationalAmplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
PhotoDMOS-FETRelay Description TheLT725isa2-FormAsolidstaterelayina8pinSMDpackagethatemploysoptically coupledMOSFETtechnologytoprovide3750V/5000Vofinputtooutputisolation.The opticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfraredLEDand MOSFETsontheoutputside | LETEXLETEX technology corp 台湾丽太丽太科技股份有限公司 | LETEX | ||
PropertyofLITE-ONOnly FEATURES *Highcollector-emittervoltage (VCEO:300V) *Highcurrenttransferratio (CTR:MIN.1,000atIF=1mA,VCE=2V) *Highisolationvoltagebetweeninputandoutput (VISO=5,000Vrms) *Lowcollectordarkcurrent (ICEO:MAX.10-6AatVCE=200V) *Dual-in-l | TENANDShenzhen Tenand Technology Co., Ltd. 腾恩深圳市腾恩科技有限公司 | TENAND | ||
PropertyofLITE-ONOnly FEATURES *Highcollector-emittervoltage (VCEO:300V) *Highcurrenttransferratio (CTR:MIN.1,000atIF=1mA,VCE=2V) *Highisolationvoltagebetweeninputandoutput (VISO=5,000Vrms) *Lowcollectordarkcurrent (ICEO:MAX.10-6AatVCE=200V) *Dual-in-l | LITEONLiteon Semiconductor Corporation 敦南科技股份 | LITEON | ||
PropertyofLITE-ONOnly FEATURES *Highcollector-emittervoltage (VCEO:300V) *Highcurrenttransferratio (CTR:MIN.1,000atIF=1mA,VCE=2V) *Highisolationvoltagebetweeninputandoutput (VISO=5,000Vrms) *Lowcollectordarkcurrent (ICEO:MAX.10-6AatVCE=200V) *Dual-in-l | TENANDShenzhen Tenand Technology Co., Ltd. 腾恩深圳市腾恩科技有限公司 | TENAND | ||
PropertyofLITE-ONOnly FEATURES *Highcollector-emittervoltage (VCEO:300V) *Highcurrenttransferratio (CTR:MIN.1,000atIF=1mA,VCE=2V) *Highisolationvoltagebetweeninputandoutput (VISO=5,000Vrms) *Lowcollectordarkcurrent (ICEO:MAX.10-6AatVCE=200V) *Dual-in-l | LITEONLiteon Semiconductor Corporation 敦南科技股份 | LITEON | ||
PropertyofLITE-ONOnly FEATURES *Highcollector-emittervoltage (VCEO:300V) *Highcurrenttransferratio (CTR:MIN.1,000atIF=1mA,VCE=2V) *Highisolationvoltagebetweeninputandoutput (VISO=5,000Vrms) *Lowcollectordarkcurrent (ICEO:MAX.10-6AatVCE=200V) *Dual-in-l | LITEONLiteon Semiconductor Corporation 敦南科技股份 | LITEON | ||
PropertyofLITE-ONOnly FEATURES *Highcollector-emittervoltage (VCEO:300V) *Highcurrenttransferratio (CTR:MIN.1,000atIF=1mA,VCE=2V) *Highisolationvoltagebetweeninputandoutput (VISO=5,000Vrms) *Lowcollectordarkcurrent (ICEO:MAX.10-6AatVCE=200V) *Dual-in-l | TENANDShenzhen Tenand Technology Co., Ltd. 腾恩深圳市腾恩科技有限公司 | TENAND | ||
PropertyofLITE-ONOnly | TENANDShenzhen Tenand Technology Co., Ltd. 腾恩深圳市腾恩科技有限公司 | TENAND | ||
Transistor PropertyofLite-OnOnly | LITEONLiteon Semiconductor Corporation 敦南科技股份 | LITEON | ||
Transistor PropertyofLite-OnOnly | LITEONLiteon Semiconductor Corporation 敦南科技股份 | LITEON | ||
Transistor PropertyofLite-OnOnly | LITEONLiteon Semiconductor Corporation 敦南科技股份 | LITEON |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
120V
- 最大电流允许值：
4A
- 最大工作频率：
>3MHZ
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
36W
- 放大倍数：
- 图片代号：
B-21
- vtest：
120
- htest：
3000100
- atest：
4
- wtest：
36
详细参数
- 型号：
BD725
- 制造商：
ISC
- 制造商全称：
Inchange Semiconductor Company Limited
- 功能描述：
isc Silicon NPN Power Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
16+ |
T0-126 |
10000 |
全新原装现货 |
询价 | ||
N/A |
23+ |
原厂封装 |
5177 |
现货 |
询价 | ||
isc |
2024 |
TO-126/252/263 |
4750 |
国产品牌isc,可替代原装 |
询价 | ||
23+ |
20000 |
正品原装货价格低qq:2987726803 |
询价 | ||||
ROHM Semiconductor |
2308 |
na |
100 |
Rohm授权代理,自营现货 |
询价 | ||
ROHM/罗姆 |
23+ |
SSOP5 |
24500 |
罗姆全系列在售 |
询价 | ||
ROHM/罗姆 |
22+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ROHM |
23+ |
35375 |
绝对原装正品/真实库存/绝无虚假/支持送货 |
询价 | |||
ROHM |
22+23+ |
102000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | |||
ROHM |
2017+ |
MSOP10 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 |
