Property of LITE-ON Only

FEATURES * High collector-emitter voltage ( VCEO : 300V ) * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current ( ICEO : MAX. 10-6A at VCE = 200V ) * Dual-in-l

文件：191.97 Kbytes 页数：9 Pages

LITEON

光宝科技

Property of LITE-ON Only

FEATURES * High collector-emitter voltage ( VCEO : 300V ) * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current ( ICEO : MAX. 10-6A at VCE = 200V ) * Dual-in-l

文件：230.24 Kbytes 页数：9 Pages

TENAND

腾恩科技

Property of LITE-ON Only

FEATURES * High collector-emitter voltage ( VCEO : 300V ) * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current ( ICEO : MAX. 10-6A at VCE = 200V ) * Dual-in-l

文件：191.97 Kbytes 页数：9 Pages

LITEON

光宝科技

Property of LITE-ON Only

FEATURES * High collector-emitter voltage ( VCEO : 300V ) * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current ( ICEO : MAX. 10-6A at VCE = 200V ) * Dual-in-l

文件：230.24 Kbytes 页数：9 Pages

TENAND

腾恩科技

Transistor

Property of Lite-On Only

文件：235.7 Kbytes 页数：9 Pages

LITEON

光宝科技