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BD435

丝印:BD435;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件:1.05321 Mbytes 页数:3 Pages

DGNJDZ

南晶电子

BD435

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 4 A Collector-base voltage V(BR)CBO: BD433 22 V BD435 32 V BD437 45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件:102.09 Kbytes 页数:1 Pages

WINNERJOIN

永而佳

BD435

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Complementary pair with BD436. Applications Medium power linear and switching applications.

文件:922.34 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BD435

TRANSISTOR (NPN)

FEATURES Amplifier and Switching Applications

文件:224.46 Kbytes 页数:2 Pages

FS

BD435

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications

文件:70.36 Kbytes 页数:3 Pages

TEL

BD435

NPN Silicon Power Transistors

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Intended for use in medium power near and switching applications • With TO-126 package • The complemen

文件:266.06 Kbytes 页数:3 Pages

MCC

BD435

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively

文件:44.24 Kbytes 页数:5 Pages

Fairchild

仙童半导体

BD435

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442. Features • Pb−Free Packages are Available*

文件:63.98 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

BD435

NPN EPITAXIAL SILICON TRANSISTOR

DESCRIPTION The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The UTC BD435 is suitable for medium power linear and switching applications. FEATURES * High DC current gain

文件:153.16 Kbytes 页数:3 Pages

UTC

友顺

BD435

EPITAXIAL SILICON POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications BD436,BD438,BD440,BD434,BD442 ->PNP BD435 ,BD437 ,BD439 ,BD433 ,BD441 -->NPN TO126 Plastic Package

文件:136.38 Kbytes 页数:4 Pages

CDIL

晶体管资料

  • 型号:

    BD435(A-C)(-10...-25)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    32V

  • 最大电流允许值:

    4A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD185,BD195,3DD62A,

  • 最大耗散功率:

    36W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    32

  • htest:

    100000100

  • atest:

    4

  • wtest:

    36

产品属性

  • 产品编号:

    BD435

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 200mA,2A

  • 电流 - 集电极截止(最大值):

    100µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    40 @ 10mA,5V

  • 频率 - 跃迁:

    3MHz

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-225AA,TO-126-3

  • 供应商器件封装:

    SOT-32-3

  • 描述:

    TRANS NPN 32V 4A SOT32-3

供应商型号品牌批号封装库存备注价格
STM
08+/09+
28500
SOT-32-3 (TO-126-3)
询价
ST专家
2021+
TO-126
6800
原厂原装,欢迎咨询
询价
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货BD435即刻询购立享优惠#长期有排单订
询价
ST/意法
2450+
TO-126
9850
只做原装正品现货或订货假一赔十!
询价
ST
24+/25+
103
原装正品现货库存价优
询价
MOT
24+
1400
询价
NULL
TO126
8400
原装长期供货!
询价
MOT
05+
原厂原装
2731
只做全新原装真实现货供应
询价
ST/PHI
25+
TO126
76510
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
恩XP
2016+
SOT89
4000
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多BD435供应商 更新时间2025-12-24 14:10:00