首页 >BD235(-6...-16)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
EPITAXIALSILICONPOWERTRANSISTORS EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications | CDIL Continental Device India Limited | CDIL | ||
TO-126Plastic-EncapsulateTransistors FEATURES ComplementtoBD234/BD236/BD238respectively | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ●Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA ●PoweramplifiersforDECTandPCNsystems ●Integratedemitterballastresistor ●fT=5.5GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor(Forlow-distortionbroadbandoutputamplifierstagesinantennaandtelecommunications) NPNSiliconRFTransistor •Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunications systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=5.5GHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNvideotransistor DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNvideotransistor DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
OptiMOS??2OptiMOS??P2SmallSignalTransistor Features •ComplementaryP+Nchannel •Enhancementmode •SuperLogiclevel(2.5Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS??2OptiMOS??P2SmallSignalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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