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BCP68

丝印:BCP68;Package:SC-73;20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件:2.12979 Mbytes 页数:23 Pages

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BCP68-Q

丝印:BCP68;Package:SC-73;20 V, 2 A NPN medium power transistors

1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin

文件:244.09 Kbytes 页数:12 Pages

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BCP68-25

丝印:BCP68/25;Package:SC-73;20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件:2.12979 Mbytes 页数:23 Pages

NEXPERIA

安世

BCP68-25-Q

丝印:BCP68/25;Package:SOT223;20 V, 2 A NPN medium power transistors

1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin

文件:244.09 Kbytes 页数:12 Pages

NEXPERIA

安世

BCP68

丝印:BCP68;Package:SC-73;20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件:2.12979 Mbytes 页数:23 Pages

NEXPERIA

安世

BCP68-Q

丝印:BCP68;Package:SC-73;20 V, 2 A NPN medium power transistors

1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin

文件:244.09 Kbytes 页数:12 Pages

NEXPERIA

安世

BCP68-25

丝印:BCP68/25;Package:SC-73;20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件:2.12979 Mbytes 页数:23 Pages

NEXPERIA

安世

BCP68-25-Q

丝印:BCP68/25;Package:SOT223;20 V, 2 A NPN medium power transistors

1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin

文件:244.09 Kbytes 页数:12 Pages

NEXPERIA

安世

BCP68

20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件:1.11315 Mbytes 页数:24 Pages

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BCP68

SOT-223 Plastic-Encapsulate Transistors

FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP)

文件:1.37715 Mbytes 页数:3 Pages

DGNJDZ

南晶电子

晶体管资料

  • 型号:

    BCP68

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    20V

  • 最大电流允许值:

    1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    1.5W

  • 放大倍数:

  • 图片代号:

    H-99

  • vtest:

    20

  • htest:

    999900

  • atest:

    1

  • wtest:

    1.5

详细参数

  • 型号:

    BCP68

  • 功能描述:

    两极晶体管 - BJT SOT-223 NPN GP AMP

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
恩XP
25+
7589
全新原装现货,支持排单订货,可含税开票
询价
恩XP
15+
SOT-223
444
原装正品 可含税交易
询价
NEXPERIA/安世
2021+
SOT-223
12000
勤思达 只做原装正品 现货供应
询价
恩XP
22+
SOT-223
49000
原装正品
询价
PHI
23+
SOT223
35680
只做进口原装QQ:373621633
询价
NEXPERIA/安世
2021+
SOT-223
9000
原装现货,随时欢迎询价
询价
PHI
25+
SOT223
15000
原装现货假一赔十
询价
恩XP
18+
NA
7000
询价
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
PHI
24+
SOT223
48650
原装正品 特价现货(香港 新加坡 日本)
询价
更多BCP68供应商 更新时间2026-1-17 22:59:00