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BCP55

High Collector Current

Features High collector current 1.3 W power dissipation.

文件:731.28 Kbytes 页数:3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BCP55

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.

文件:191.74 Kbytes 页数:6 Pages

FAIRCHILD

仙童半导体

BCP55

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

文件:43.44 Kbytes 页数:8 Pages

PHI

PHI

PHI

BCP55

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

文件:48.04 Kbytes 页数:5 Pages

INFINEON

英飞凌

BCP55

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件:827.56 Kbytes 页数:7 Pages

INFINEON

英飞凌

BCP55

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Medium Power DC Applications Complementary BCP51 BCP52 and BCP53

文件:211.9 Kbytes 页数:4 Pages

CDIL

BCP55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件:131.1 Kbytes 页数:7 Pages

DIODES

美台半导体

BCP55

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件:236.7 Kbytes 页数:2 Pages

DIOTEC

德欧泰克

BCP55

60 V, 1 A NPN medium power transistors

General description NPN medium power transistor series. Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers

文件:161.1 Kbytes 页数:15 Pages

恩XP

恩XP

BCP55

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

文件:1.36931 Mbytes 页数:4 Pages

JIANGSU

长电科技

晶体管资料

  • 型号:

    BCP55

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    射频/高频放大 (HF)_功率放大 (L)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    1A

  • 最大工作频率:

    130MHZ

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    1.5W

  • 放大倍数:

    β=250

  • 图片代号:

    H-99

  • vtest:

    60

  • htest:

    130000000

  • atest:

    1

  • wtest:

    1.5

产品属性

  • 产品编号:

    BCP55

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 50mA,500mA

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    40 @ 150mA,2V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-261-4,TO-261AA

  • 供应商器件封装:

    SOT-223-4

  • 描述:

    TRANS NPN 60V 1.5A SOT223-4

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
25+
SOT223
600000
NEXPERIA/安世全新特价BCP55即刻询购立享优惠#长期有排单订
询价
FAIRCHILD
16+/17+
SOT223
3500
原装正品现货供应56
询价
Nexperia/安世
21+
SOT-223
13490
十年信誉,只做原装,有挂就有现货!
询价
NEXPERIA/安世
2021+
SOT-223
12000
勤思达 只做原装正品 现货供应
询价
NEXPERIA/安世
19+
SOT223
300000
原装正品 可含税交易
询价
恩XP
2021+
SOT223
9000
原装现货,随时欢迎询价
询价
恩XP
18+
SOT223
120000
询价
ON/安森美
23+
25850
新到现货,只有原装
询价
恩XP
18+
SOT223
120000
询价
FAIRCHILD/仙童
2025+
SOT-223
5000
原装进口价格优 请找坤融电子!
询价
更多BCP55供应商 更新时间2026-4-17 18:03:00