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BC55-16PA

60V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC55-16PA

60V,1ANPNmediumpowertransistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC55-16PAS

45V/60V/80V,1ANPNmediumpowertransistors

Featuresandbenefits *HighcollectorcurrentcapabilityICand ICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC55-16PAS

45V/60V/80V,1ANPNmediumpowertransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP55-16

NPNSiliconAFTransistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCP55-16

NPNSiliconAFTransistors

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCP55-16

60V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP55-16

NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BCP55-16

NPNmediumpowertransistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BCP55-16

1A,60VNPNSiliconMediumPowerTransistor

FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BCP55-16

NPNPlastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半导体公司

BCP55-16

NPNSiliconAFTransistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCP55-16

NPNSiliconEpitaxialPlanarTransistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

BCP55-16-C

NPNSiliconMediumPowerTransistor

FEATURES •ForAFDriverandOutputStages •HighCollectorCurrent •LowCollector-EmitterSaturationVoltage

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BCP55-16-Q

60V,1ANPNmediumpowertransistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP55-16T

60V,1APNPmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP55-16T

60V,1ANPNmediumpowertransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCX55-16

60V,1ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEITA NPNcomplement BCX55BCX52 BCX55-10BCX52-10 BCX55-16 SOT89SC-62 BCX52-16 2.Featuresandbenef

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCX55-16

60V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCX55-16

NPNPlastic-EncapsulateTransistors

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHSCompliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

详细参数

  • 型号:

    BCP55-16 T/R

  • 功能描述:

    两极晶体管 - BJT TRANS MED PWR TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
PH
22+
NA
30000
原装现货假一罚十
询价
NXP
2339+
N/A
13523
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEXPERIA
1809+
SOT-223
6675
就找我吧!--邀您体验愉快问购元件!
询价
NEXPERIA/安世
22+
10000
绝对原装现货热卖
询价
NEXPERIA/安世
22+
46200
郑重承诺只做原装进口货
询价
PHILLIPS
2023+环保现货
原厂原装
1000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
PHI
2305+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
NEXPERIA/安世
23+
SOT-223
45000
原装正品现货 低价出售 假一赔十
询价
长电
2020+
SOT-223
945385
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
长电
2219+
SOT-223
29356
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多BCP55-16 T/R供应商 更新时间2024-6-20 11:30:00