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BC859C

PNPSiliconAFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC859CL

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

BC859CMTF

PNPEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC859CW

SMDGeneralPurposePNPTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC859CW

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC859CW

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC859CW

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC859CW

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC859CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC859CW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BC859CW

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC859S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

DiotecDIOTEC

德欧泰克

BC859S

Powerdissipation,plasticcase,Weightapprox

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

BC859W

PNPTransistors

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC859W

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forgeneralpurposeandswitchingapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

BC859W

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC859W

PNPGENERALPURPOSETRANSISTORS

VOLTAGE30/45/65VoltsCURRENT200mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Complimentary(NPN)Devices:BC846W/BC847W/BC848W/BC849WSeries •IncompliancewithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BC859W

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

DiotecDIOTEC

德欧泰克

BC859W

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC859W

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

晶体管资料

  • 型号:

    BC859-W

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低噪放大 (ra)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    30V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    150MHZ

  • 引脚数:

    3

  • 可代换的型号:

    BCF29,BCF31,BCF70,2SA1507,2SA1527,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-15

  • vtest:

    30

  • htest:

    150000000

  • atest:

    .1

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
PH
15+
SOT-323
6698
询价
Philips
22+23+
Sot-323
30939
绝对原装正品全新进口深圳现货
询价
PHILIPS
SOT-323
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
NXP/恩智浦
23+
SOT-323
50000
全新原装正品现货,支持订货
询价
NXP/恩智浦
2022
SOT-323
80000
原装现货,OEM渠道,欢迎咨询
询价
NEC
2008++
SOT-363SOT-323-6
6200
新进库存/原装
询价
NEC-日本电气
24+25+/26+27+
SOT-363
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ON/安森美
SOT-23
265209
假一罚十原包原标签常备现货!
询价
ON/安森美
SOT-23
30000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ON/安森美
2021+
-
30000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多BC859-W供应商 更新时间2024-6-6 13:00:00