BC858BW

SMD General Purpose PNP Transistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC858BW

Marking：3K；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

BC858BW

PNP General Purpose Transistors

BC858BW

Marking：G3K；Package：SOT-323；PNP General Purpose Transistor

BC858BW

Surface Mount General Purpose Si-Epi-Planar Transistors

BC858BW

Marking：3Ks；Package：SOT-323；PNP Silicon AF Transistor

BC858BW-7

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846AW–BC848CW) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101

BC858BW-G

Small Signal Transistor

Features -Ideallysuitedforautomaticinsertion -ForSwitchingandAFAmplifierApplications -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:-0.1A -Collector-basevoltage VCBO:BC856W=-80V BC857W=-50V BC858W=-30V -Operatingand

BC858BWT1

General Purpose Transistors(PNP Silicon)

GeneralPurposeTransistors PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications.

BC858BWT1

CASE 419-02, STYLE 3 SOT-323/SC-70

GeneralPurposeTransistorsPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications.