Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

文件：106.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors(PNP Duals)

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：164.15 Kbytes 页数：5 Pages

LRC

乐山无线电

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：469.23 Kbytes 页数：5 Pages

ETL

亚历电子

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件：178.77 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual PNP Small Signal Surface Mount Transistor

Features Epitaxial planar die construction © Utra-small surface mount package

文件：1.29464 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：866.73 Kbytes 页数：11 Pages

INFINEON

英飞凌

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：40.8 Kbytes 页数：8 Pages

PHI

PHI

PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN)

文件：165.44 Kbytes 页数：8 Pages

INFINEON

英飞凌

45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > -45V IC = -100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BFZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

文件：479.92 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：3W；Package：X2-DFN0606-3；45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO > -45V IC = -100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40 Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BFZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

文件：479.92 Kbytes 页数：7 Pages

DIODES

美台半导体