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BC857BDW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

ETL

E-Tech Electronics LTD

ETL

BC857BDW1T1G

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC857BE6327

PNP Silicon AF Transistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30hzand15kHz •Complementarytypes: BC847...-BC850...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BC857BF

PNP Silicon AF Transistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC847BF,BC848BFBC849BF,BC850BF(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BC857BF

PNP general purpose transistors

DESCRIPTION PNPtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. NPNcomplements:BC846F,BC847FandBC848Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BC857BFZ

45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO>-45V IC=-100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryNPNTypeBC847BFZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

DIODESDiodes Incorporated

达尔科技

DIODES

BC857BFZ-7B

45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO>-45V IC=-100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryNPNTypeBC847BFZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

DIODESDiodes Incorporated

达尔科技

DIODES

BC857B-HF

General Purpose Transistor

GeneralPurposeTransistor RoHSDevice HalogenFree Features ​​​​​​​-Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

BC857BHZG

PNP General purpose transistor

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC847BHZG Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

BC857BL

GENERAL PURPOSE TRANSISTORS PNP SILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

BC857BL3

PNP Silicon AF Transistors

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30hzand15kHz •Complementarytypes:BC846...-BC850...(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BC857BL3

PNP Silicon AF Transistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30hzand15kHz •Complementarytypes: BC847...-BC850...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BC857BLP

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-45V •IC=-100mAHighCollectorCurrent •PD=1000mWPowerDissipation •0.60mm2PackageFootprint,13timesSmallerthanSOT23 •0.5mmHeightPackageMinimizingOff-BoardProfile •ComplementaryNPNTypeBC847BLP •TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODESDiodes Incorporated

达尔科技

DIODES

BC857BLP4

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-45V •IC=-100mAHighCollectorCurrent •PD=1000mWPowerDissipation •0.60mm2PackageFootprint,13timesSmallerthanSOT23 •0.4mmHeightPackageMinimizingOff-BoardProfile •ComplementaryNPNTypeBC847BLP4 •TotallyLead-Free&FullyRoHSCompliant(Notes

DIODESDiodes Incorporated

达尔科技

DIODES

BC857BLP4-7

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-45V •IC=-100mAHighCollectorCurrent •PD=1000mWPowerDissipation •0.60mm2PackageFootprint,13timesSmallerthanSOT23 •0.4mmHeightPackageMinimizingOff-BoardProfile •ComplementaryNPNTypeBC847BLP4 •TotallyLead-Free&FullyRoHSCompliant(Notes

DIODESDiodes Incorporated

达尔科技

DIODES

BC857BLP-7

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-45V •IC=-100mAHighCollectorCurrent •PD=1000mWPowerDissipation •0.60mm2PackageFootprint,13timesSmallerthanSOT23 •0.5mmHeightPackageMinimizingOff-BoardProfile •ComplementaryNPNTypeBC847BLP •TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODESDiodes Incorporated

达尔科技

DIODES

BC857BLT1

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

GeneralPurposeTransistors PNPSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

BC857BLT1

General Purpose Transistors(PNP Silicon)

GeneralPurposeTransistors PNPSilicon

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

BC857BLT1

General Purpose Transistors

GeneralPurposeTransistors PNPSilicon Features •Pb−FreePackagesareAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC857BLT1G

General Purpose Transistors PNP Silicon

GeneralPurposeTransistors PNPSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

产品属性

  • 产品编号:

    BC857B

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    剪切带(CT)带盒(TB)

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    650mV @ 5mA,100mA

  • 电流 - 集电极截止(最大值):

    15nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    220 @ 2mA,5V

  • 频率 - 跃迁:

    100MHz

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23-3

  • 描述:

    TRANS PNP 45V 0.1A SOT23-3

供应商型号品牌批号封装库存备注价格
NXP/恩智浦
23+
SOT-23-3
45000
热卖优势现货
询价
NXP/恩智浦
21+
SOT-23
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
NXP(恩智浦)
23+
标准封装
9546
全新原装正品/价格优惠/质量保障
询价
215
18873000
15+
0
原厂原装
询价
PHILIPS/NXP
SOT-23
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
NXP
16+/17+
SOT23
3500
原装正品现货供应56
询价
NEXPERIA
23+
SOT23
14700
NXP现货商!常备进口原装库存现货!
询价
NXP
18+
SOT23
660000
一级代理/全新原装现货/长期供应!
询价
NXP/恩智浦
2019+
SOT23
36000
原盒原包装 可BOM配套
询价
NXP/恩智浦
16+
SOT-23
15000
现货超低价支持实单
询价
更多BC857B供应商 更新时间2024-4-26 20:23:00