BC857BFZ

45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO>-45V IC=-100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryNPNTypeBC847BFZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

BC857BFZ-7B

Marking：3W；Package：X2-DFN0606-3；45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

Features BVCEO>-45V IC=-100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryNPNTypeBC847BFZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti

BC857BFZ_15

45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606

BC857BFZ-7B

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 0.1A 3DFN

BC857B-HF

GeneralPurposeTransistor

GeneralPurposeTransistor RoHSDevice HalogenFree Features ​​​​​​​-Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V

BC857BHZG

PNPGeneralpurposetransistor

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC847BHZG Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER

BC857BL

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

BC857BLP

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>-45V •IC=-100mAHighCollectorCurrent •PD=1000mWPowerDissipation •0.60mm2PackageFootprint,13timesSmallerthanSOT23 •0.5mmHeightPackageMinimizingOff-BoardProfile •ComplementaryNPNTypeBC847BLP •TotallyLead-Free&FullyRoHSCompliant(Notes1

BC857BLP

50VPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

BC857BLP

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR