丝印：N2；Package：TSOP6；PNP/PNP general purpose double transistors

1. General description PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. NPN/NPN complement: BC817DS-Q NPN/PNP complement: BC817DPN-Q 2. Features and benefits • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and reco

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NEXPERIA

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PNP/PNP general purpose double transistors

PNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.\n NPN/NPN complement: BC817DS-Q\n NPN/PNP complement: BC817DPN-Q

Nexperia

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POWER TRANSISTORS(8.0A,150-200V,60W)

文件：110.55 Kbytes 页数：3 Pages

MOSPEC

统懋

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨