BC807W-Q

45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC807W-Q

Marking：5D；Package：SC-70；45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC807W-Q_SER

45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC807W-QX

Package：SC-70，SOT-323；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 0.5A SOT323

Nexperia USA Inc.

BC807-XX

Ldeallysuitedforautomaticinsertion

FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817)

BD807

iscSiliconNPNPowerTransistor

DESCRIPTION ·DCCurrentGain-:hFE=30(Min.)@IC=2A ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) ·ComplementtoTypeBD808 APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.

BD807

SiliconNPNPowerTransistor

BGO807

870MHzopticalreceivers

BGO807

870MHzopticalreceivers

Generaldescription HighdynamicrangeopticalreceiveramplifiermodulesinastandardSOT115packagewherethenon-jacketedfiberhaseithernoconnectororhasanFC/APCorSC/APCconnector. Features ■Excellentlinearity ■Lownoise ■Excellentflatness ■StandardCATVoutline ■Rugged

BGO807C

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp