丝印：5C1；Package：SOT-323；General Purpose Transistors

General Purpose Transistors PNP Silicon FEATURE ● Collector current capability IC = -500 mA. ● Collector-emitter voltage VCEO(max) = -45 V. ● General purpose switching and amplification. ● NPN complement: BC817U Series. ● We declare that the material of product compliance with RoHS requirem

文件：278.78 Kbytes 页数：3 Pages

FS

TRANSISTOR:Genreal Purpuse

First Silicon

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN)

文件：47.16 Kbytes 页数：5 Pages

Infineon

英飞凌

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 225 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and r

文件：174.71 Kbytes 页数：2 Pages

Diotec

德欧泰克

PNP Silicon Epitaxial Planar Transistor

FEATURES ● For general AF applications. ● High collector current. ● High current gain. ● Low collector-emitter saturation voltage. ● Complements the BC817W. APPLICATIONS ● For general purpose amplification and switching.

文件：155.82 Kbytes 页数：4 Pages

BILIN

银河微电