Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

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HitachiHitachi Semiconductor

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：61.89 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：295.09 Kbytes 页数：10 Pages

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：295.09 Kbytes 页数：10 Pages

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Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

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HitachiHitachi Semiconductor

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Silicon Epitaxial Planar Dual Capacitance Diodes

Features: Common cathode

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Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

Silicon Variable Capacitance Diode Preliminary Data ● For FM tuners ● Monolithic chip with common cathode for perfect tracking of both diodes ● Uniform square law characteristics ● Ideal Hifi tuning device when used in Low-distortion back-to back configuration ● Color-coded capacitance subgr

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：217.81 Kbytes 页数：10 Pages

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：67.88 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

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