Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

文件：102.66 Kbytes 页数：14 Pages

HitachiHitachi Semiconductor

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