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型号	下载订购	功能描述	制造商上传企业	LOGO
BB304C	文件：67.88 Kbytes Page：12 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi 文件：67.88 Kbytes 页数：12 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
BB304C	文件：217.81 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi 文件：217.81 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
BB304CDW-TL-E	文件：217.81 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi 文件：217.81 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
BB304M	文件：68.48 Kbytes Page：12 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding t 文件：68.48 Kbytes 页数：12 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
BB304M	文件：301.75 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding t 文件：301.75 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
BB304MDW-TL-E	文件：301.75 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding t 文件：301.75 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS

详细参数

型号：
BB304C
制造商：
HITACHI
制造商全称：
Hitachi Semiconductor
功能描述：
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	BB304C	renesas	24+	SOT-343	750		询价
深圳市弘为电子有限公司	BB304CDW-TL	RENESAS	24+	SOT343	3000	原装现货假一罚十	询价
深圳市鹏和科技有限公司	BB304CDW-TL	RENESAS	24+	SOT323-4	5000	只做原装公司现货	询价
深圳市振宏微科技有限公司	BB304CDW	SOT-343	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市莱克讯科技有限公司	BB304CDW	RENESAS	1922+	SOT-343	35689	原装进口现货库存专业工厂研究所配单供货	询价
深圳市威尔健半导体有限公司	BB304CDW-TL-E	RENESAS/瑞萨	23+	SOT343	50000	全新原装正品现货,支持订货	询价
深圳市英瑞尔电子科技有限公司	BB304CDW-TL	RENESAS	24+	SOT343	598000	原装现货假一赔十	询价
贸泽芯城（深圳）电子科技有限公司	BB304CDW-TL	RENESAS/瑞萨	23+	SOT343	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市威雅利发展有限公司	BB304CDW-TL-E	RENESAS	07+	SOT343	15000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市星宇佳科技有限公司	BB304CDW-TL	HITACHI	01+	SOT343	3000		询价

更多BB304C供应商更新时间2026-4-17 16:30:00

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