Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

Silicon Variable Capacitance Diode Preliminary Data ● For FM tuners ● Monolithic chip with common cathode for perfect tracking of both diodes ● Uniform square law characteristics ● Ideal Hifi tuning device when used in Low-distortion back-to back configuration ● Color-coded capacitance subgr

文件：60.17 Kbytes 页数：3 Pages

SIEMENS

西门子

Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

Infineon

英飞凌

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：67.88 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：217.81 Kbytes 页数：10 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：217.81 Kbytes 页数：10 Pages

RENESAS

瑞萨