Silicon Epitaxial Planar Dual Capacitance Diodes

Features: Common cathode

文件：293.45 Kbytes 页数：1 Pages

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Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

Silicon Variable Capacitance Diode Preliminary Data ● For FM tuners ● Monolithic chip with common cathode for perfect tracking of both diodes ● Uniform square law characteristics ● Ideal Hifi tuning device when used in Low-distortion back-to back configuration ● Color-coded capacitance subgr

文件：60.17 Kbytes 页数：3 Pages

SIEMENS

西门子

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：67.88 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：217.81 Kbytes 页数：10 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstandi

文件：217.81 Kbytes 页数：10 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding t

文件：301.75 Kbytes 页数：10 Pages

RENESAS

瑞萨

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding t

文件：68.48 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding t

文件：301.75 Kbytes 页数：10 Pages

RENESAS

瑞萨

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

• Build in Biasing Circuit; To reduce using parts cost & PC board space.\n• High gain;\n   (PG = 29 dB typ. at f = 200 MHz)\n• Low noise characteristics;\n   (NF = 1.2 dB typ. at f = 200 MHz)\n• Wide supply voltage range;\n   Applicable with 5V to 9V supply voltage.\n• Withstanding to ESD;\n   Build;

HITACHI

日立

Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

Infineon

英飞凌