BB304M中文资料Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier数据手册HITACHI规格书

特性 Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
   (PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
   (NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
   Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
   Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod)