Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

文件：58.21 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC VHF RF Amplifier

HITACHI

日立

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

文件：125.64 Kbytes 页数：2 Pages

MOSPEC

统懋

Direct Joint Type

文件：31.83 Kbytes 页数：1 Pages

PANASONIC

松下

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)

文件：232.93 Kbytes 页数：3 Pages

MOSPEC

统懋