BB302C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

BB302M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

BB302M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

BB302MBW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

BC302

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

BC302

SmallSignalTransistors

BC302

BipolarNPNDeviceinaHermeticallysealedTO39

BC302

NPNEPITAXIALPLANARSILICONTRANSISTORS

NPNEPITAXIALPLANARSILICONTRANSISTORS NPNSILICONLOW-AND-MEDIUMPOWERTRANSISTORS.

BC302

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

BD302

iscSiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=30(Min.)@IC=-3A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-45V(Min.) •ComplementtoTypeBD301 APPLICATIONS •Designedforaudiooutputstagesupto25W,verticaldeflectioncircuitsincolorTVreceivers.