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BAS116DY

丝印:2H;Package:TSSOP6;Low-leakage dual switching diode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116DY-Q

丝印:2H;Package:TSSOP6;Low-leakage dual switching diode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116GW-Q

丝印:GB;Package:SOD123;Low leakage switching diode

1.Generaldescription Lowleakageswitchingdiode,encapsulatedinanSOD123smallSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr=0.8μs •Lowleakagecurrent:IR=3pA •RepetitivepeakreversevoltageVRRM≤85V •Lowcapacitance:

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116H

丝印:B1;Package:SOD123F;Low leakage switching diode

1.1Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123Fsmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits SmallandflatleadSMDplasticpackage Lowleakagecurrent Excellentcoplanarityandimprovedthermalbehavior

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116H

75 V, low leakage diode in small SOD123F package

Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123FsmallSMDplasticpackage. Features ■SmallandflatleadSMDplasticpackage ■Lowleakagecurrent Applications ■General-purposeswitching

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BAS116HY

丝印:D8U;Package:SOT-23;Switching Diode (Low leakage)

Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

BAS116HYFH

丝印:D8U;Package:SOT-23;Switching Diode (Low leakage)

Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

BAS116L

Switching Diode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LP3

ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE

Features •Ultra-SmallLeadlessSurfaceMountPackage(0.6x0.3mm) •Ultra-LowProfilePackage(0.3mm) •VeryLowLeakageCurrent •LowCapacitance •IdealforCompactBatteryPoweredPortableElectronics •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimo

DIODESDiodes Incorporated

美台半导体

BAS116LP3-7

ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE

Features •Ultra-SmallLeadlessSurfaceMountPackage(0.6x0.3mm) •Ultra-LowProfilePackage(0.3mm) •VeryLowLeakageCurrent •LowCapacitance •IdealforCompactBatteryPoweredPortableElectronics •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimo

DIODESDiodes Incorporated

美台半导体

技术参数

  • Status:

    Active

  • Description:

    Schottky Barrier Diode

  • Configuration:

    Single

  • VRRM Min (V):

    40

  • VF Max (V):

    0.4

  • IRM Max (uA):

    100

  • IO(rec) Max (A):

    1

  • IFSM Max (A):

    6

  • trr Max (ns):

    5

  • Cj Max (pF):

    175

  • Package Type:

    SOT-23

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
2023+
SOT23
3000
一级代理优势现货,全新正品直营店
询价
INFINEON/英飞凌
22+
PG-SC79-2
20000
原装现货,实单支持
询价
ADI
23+
PG-SC79-2
8000
只做原装现货
询价
ADI
23+
PG-SC79-2
7000
询价
INFINEON/英飞凌
24+
SOT23
20000
只做正品原装现货
询价
INFINEON
2016+
SOT23
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
恩XP
23+
原厂封装
12300
询价
24+
2000
全新
询价
PHI
23+
SOD-80
1200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
12+
SOT223
15000
全新原装,绝对正品,公司现货供应。
询价
更多BAS供应商 更新时间2025-7-30 12:25:00