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BAS116TT1G

Switching Diode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116TW

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE100VoltsPOWER200mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2nAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •IncompliancewithEURoHS2002/95/ECdirectives MECHANICALDATA •Case:SOT-363plastic

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BAS116UDJ

DUAL SURFACE MOUNT SWITCHING DIODE

Features •Ultra-SmallSurfaceMountPackage(1.0x0.8mm) •Ultra-LowProfilePackage(0.45mm) •UltraLowLeakageCurrent(5nA@VR=75V) •LowCapacitance •IdealforBatteryPoweredPortableApplications •LeadFreeByDesign/RoHSCompliant(Note1) •HalogenandAntimonyFreeGreenDe

DIODESDiodes Incorporated

美台半导体

BAS116UDJ-7

DUAL SURFACE MOUNT SWITCHING DIODE

Features •Ultra-SmallSurfaceMountPackage(1.0x0.8mm) •Ultra-LowProfilePackage(0.45mm) •UltraLowLeakageCurrent(5nA@VR=75V) •LowCapacitance •IdealforBatteryPoweredPortableApplications •LeadFreeByDesign/RoHSCompliant(Note1) •HalogenandAntimonyFreeGreenDe

DIODESDiodes Incorporated

美台半导体

BAS116V

SURFACE MOUNT LOW LEAKAGE DIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) MechanicalData •Case:SOT563 •CaseMaterial:MoldedPlastic,“Green”Mo

DIODESDiodes Incorporated

美台半导体

BAS116V-7

SURFACE MOUNT LOW LEAKAGE DIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) MechanicalData •Case:SOT563 •CaseMaterial:MoldedPlastic,“Green”Mo

DIODESDiodes Incorporated

美台半导体

BAS116VY

丝印:2J;Package:TSSOP6;Low-leakage triple switching diode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolatedtriplediodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:max.5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxim

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116VY-Q

丝印:2J;Package:TSSOP6;Low-leakage triple switching diode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolatedtriplediodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:max.5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxim

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116W

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES VOLTAGE100VoltsPOWER200mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •BothnormalandPbfreeproduct

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BAS116W

0.215A , 85V Surface Mount Small Signal Switching Diode

FEATURES •Lowleakagecurrentapplications. •Mediumspeedswitchingtimes. •SurfacemountpackageideallysuitedforautomaticInsertion. APPLICATINS •Highspeedswitchingapplication.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

技术参数

  • Status:

    Active

  • Description:

    Schottky Barrier Diode

  • Configuration:

    Single

  • VRRM Min (V):

    40

  • VF Max (V):

    0.4

  • IRM Max (uA):

    100

  • IO(rec) Max (A):

    1

  • IFSM Max (A):

    6

  • trr Max (ns):

    5

  • Cj Max (pF):

    175

  • Package Type:

    SOT-23

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
2023+
SOT23
3000
一级代理优势现货,全新正品直营店
询价
INFINEON/英飞凌
22+
PG-SC79-2
20000
原装现货,实单支持
询价
ADI
23+
PG-SC79-2
8000
只做原装现货
询价
ADI
23+
PG-SC79-2
7000
询价
INFINEON/英飞凌
24+
SOT23
20000
只做正品原装现货
询价
PHI
24+
SMD
6980
原装现货,可开13%税票
询价
INFINEON
2016+
SOT23
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
PHI
23+
SOD-80
1200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
PHI
00+
SOT-23
100
原装
询价
恩XP
23+
原厂封装
12300
询价
更多BAS供应商 更新时间2025-7-29 10:35:00