BAS116VY

Marking：2J；Package：TSSOP6；Low-leakage triple switching diode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolatedtriplediodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:max.5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxim

BAS116VY-Q

Marking：2J；Package：TSSOP6；Low-leakage triple switching diode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolatedtriplediodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:max.5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxim

BC806-16W

Marking：2J；Package：SC-70；80 V, 500 mA PNP general-purpose transistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

BZX884S-B5V1

Marking：2J；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B5V1-Q

Marking：2J；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

ESD15V32D-C

Marking：2J；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 255~416WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Bidirectional) Lowclampingvoltage Workingvoltages:3.3V~48V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact): 3.3V~18V); IEC61000-4-2(ESD)±15kV(air),±15kV(contact):

ESD15V32DS-C

Marking：2J；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 255~410WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsonebidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~48V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30kV

MM3Z18

Marking：2J；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PBSS4230PANP

Marking：2J；Package：DFN2020-6；30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4230PAN.PNP/PNPcomplement:PBSS5230PAP. 2.Featuresandbenefits •Verylowcollect

PMEG45T20EXD

Marking：2J；Package：CFP2-HP；45 V, 2 A Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP2-HP(SOD323HP)powerflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •LowQrrandlowIRM •Lowleakagecurre