丝印：2J；Package：TSSOP6；Low-leakage triple switching diode

1. General description Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low leakage current: max. 5 nA • Switching time: typical 0.8 μs • Continuous reverse voltage: maxim

文件：203.88 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2J；Package：TSSOP6；Low-leakage triple switching diode

1. General description Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low leakage current: max. 5 nA • Switching time: typical 0.8 μs • Continuous reverse voltage: maxim

文件：203.46 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2J；Package：SC-70；80 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • High voltage • Two current gain selections • AEC-Q101 qualified

文件：247.5 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2J；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2J；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2J；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 255~416 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line or power line(Bidirectional) Low clamping voltage Working voltages:3.3V ~ 48V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact): 3.3V ~ 18V); IEC61000-4-2 (ESD) ±15kV (air), ±15kV (contact):

文件：895.29 Kbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：2J；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 255~410 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line or power line Low Clamping Voltage Working Voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2(ESD) ±30kV

文件：2.21656 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：2J；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

丝印：2J；Package：DFN2020-6；30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collect

文件：854.83 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2J；Package：CFP2-HP；45 V, 2 A Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP2-HP (SOD323HP) power flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low Qrr and low IRM • Low leakage curre

文件：254.52 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司