丝印：2J9；Package：DFN4C；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm; t 0.38 mm (Typ.)). High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V) High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V) High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V) High Ripple rejection

文件：1.78112 Mbytes 页数：20 Pages

TOSHIBA

东芝

丝印：2J9U；Package：WSON；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

TI

德州仪器