丝印：2J；Package：DFN2020-6；30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collect

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

文件：346.83 Kbytes 页数：21 Pages

恩XP

30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

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安世

30 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. 2. Features and benefits • Very low collector-

文件：730.47 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN low VCEsat (BISS) transistor

DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation

文件：47.87 Kbytes 页数：7 Pages

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