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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BB501	文件：71.04 Kbytes Page：13 Pages	BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	HitachiHitachi, Ltd. 日立公司	Hitachi
BB501	文件：71 Kbytes Page：13 Pages	BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	HitachiHitachi, Ltd. 日立公司	Hitachi
BB501C	文件：71 Kbytes Page：13 Pages	BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	HitachiHitachi, Ltd. 日立公司	Hitachi
BB501C	文件：198.46 Kbytes Page：10 Pages	BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
BB501CAS-TL-E	文件：198.46 Kbytes Page：10 Pages	BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
BB501M	文件：300.86 Kbytes Page：11 Pages	BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
BB501M	文件：71.04 Kbytes Page：13 Pages	BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	HitachiHitachi, Ltd. 日立公司	Hitachi
BB501MAS-TL-E	文件：300.86 Kbytes Page：11 Pages	BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
BC501	文件：45.83 Kbytes Page：2 Pages	BA/BCSeries:1.5-6.0WattsSingleandDualOutputs FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BC501S	文件：181.38 Kbytes Page：1 Pages	HardToolStorageModule,S-Hook TheBucketWorkCenterisanecosystemthatwillrevampthewayaLinemanworks.ItallowsLinemantocustomizetheirworkspace,justlikeother professionalscustomizetheirofficespace.TheKleinToolsHardToolStorageModulehasmultipleslotstoaccommodateawidevarietyofLineman tools.	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
BD501	文件：109.89 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistors DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=50V(Min) 80V(Min) ·HighPowerDissipation APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementary	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
BD501	文件：128.02 Kbytes Page：2 Pages	SiliconNPNPowerTransistors	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
BD501B	文件：109.89 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistors DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=50V(Min) 80V(Min) ·HighPowerDissipation APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementary	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
BD501B	文件：128.02 Kbytes Page：2 Pages	SiliconNPNPowerTransistors	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
BD501N	文件：245.62 Kbytes Page：2 Pages	50AMPBLOCKDIODES	SHUNYEShunye Enterprise 顺烨电子江苏顺烨电子有限公司	SHUNYE
BD501P	文件：245.62 Kbytes Page：2 Pages	50AMPBLOCKDIODES	SHUNYEShunye Enterprise 顺烨电子江苏顺烨电子有限公司	SHUNYE
BD-A501RD	文件：197.87 Kbytes Page：2 Pages	DUALDIGITLEDDISPLAYS	YSTONEYellow Stone Corp 早安股份早安股份有限公司	YSTONE
BD-A501RD-A	文件：197.87 Kbytes Page：2 Pages	DUALDIGITLEDDISPLAYS	YSTONEYellow Stone Corp 早安股份早安股份有限公司	YSTONE
BD-C501RD	文件：197.87 Kbytes Page：2 Pages	DUALDIGITLEDDISPLAYS	YSTONEYellow Stone Corp 早安股份早安股份有限公司	YSTONE
BD-C501RD-A	文件：197.87 Kbytes Page：2 Pages	DUALDIGITLEDDISPLAYS	YSTONEYellow Stone Corp 早安股份早安股份有限公司	YSTONE

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	BA501A4	BEC	23+	DIP/18	8000	全新原装现货,欢迎来电咨询	询价
深圳市一线半导体有限公司	BA501A4	BEC	96/97+	DIP18	603		询价
千层芯半导体(深圳)有限公司	BA501A4	BEC	17+	DIP	20000	原装进口现货/只做原装	询价
深圳市弘为电子有限公司	BA501A4	BEC	16+	DIP/18	1068	原装现货假一罚十	询价
上海鑫科润电子科技有限公司	BA501A4	BEC	96/97+	DIP/18	603	原装现货海量库存欢迎咨询	询价
深圳市华来深电子有限公司	BA501A4	BEC	23+	DIP	8650	受权代理!全新原装现货特价热卖!	询价
深圳市锦喆鸿电子有限公司	BA501A4	BEC	21+	DIP	12588	原装正品,自己库存假一罚十	询价
深圳市富芯乐电子科技有限公司	BA501A4	BEC	22+	DIP	56	全新原装现货	询价
深圳市芯祺盛科技有限公司	BA501M	BENCENT	1911+	1812	999999	保证原装房间现货	询价
深圳市惊羽科技有限公司	BA501N-D	BENCENT	24+25+/26+27+	车规-保险丝	26800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多BA501A供应商更新时间2024-6-4 16:00:00

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